Invention Grant
US09450064B1 Semiconductor element, method for fabricating the same, and semiconductor device including the same
有权
半导体元件及其制造方法以及包括该元件的半导体器件
- Patent Title: Semiconductor element, method for fabricating the same, and semiconductor device including the same
- Patent Title (中): 半导体元件及其制造方法以及包括该元件的半导体器件
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Application No.: US14828168Application Date: 2015-08-17
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Publication No.: US09450064B1Publication Date: 2016-09-20
- Inventor: Byung Jin Cho , Hyun Jun Ahn , Jung Min Moon
- Applicant: SK hynix Inc. , KOREA ADVANCED INSTUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gyeonggi-do KR Daejeon
- Assignee: SK Hynix Inc.,Korea Advanced Institute of Science and Technology
- Current Assignee: SK Hynix Inc.,Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Gyeonggi-do KR Daejeon
- Agency: I P & T Group LLP
- Priority: KR10-2015-0049375 20150408
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/51 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L21/28
Abstract:
A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate dielectric layer; and an intermediate layer formed between the gate dielectric layer and the flat band voltage adjusting layer. A negative flat band voltage generated at the intermediate layer and a positive flat band voltage generated between the substrate and the gate dielectric layer may offset each other.
Public/Granted literature
- US20160300921A1 SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2016-10-13
Information query
IPC分类:
