Methods for forming a vertically movable gate field effect transistor (VMGFET) on a silicon-on-insulator (SOI) wafer are described. The methods include providing a process of making VMGFET devices without critical alignment of masks between sequential etch and diffusion steps. The oxide layer of the SOI wafer is used for a self-limiting etch stop layer and for a sacrificial layer to form an insulating layer between a gate electrode and a substrate. The proper location of the gate electrode with respect to the source and drain junctions is insured by using a silicon gate structure as a mask layer for the diffusion process for defining the source and drain junctions.