Invention Grant
- Patent Title: FinFET having superlattice stressor
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Application No.: US14625803Application Date: 2015-02-19
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Publication No.: US09450098B2Publication Date: 2016-09-20
- Inventor: Yi-Jing Lee , You-Ru Lin , Cheng-Tien Wan , Cheng-Hsien Wu , Chih-Hsin Ko
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/267 ; H01L29/165 ; H01L21/02 ; H01L29/04 ; H01L29/15 ; H01L29/161 ; H01L29/205 ; H01L29/66 ; H01L29/51
Abstract:
A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials.
Public/Granted literature
- US20150162447A1 FinFET Having Superlattice Stressor Public/Granted day:2015-06-11
Information query
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