Invention Grant
- Patent Title: Semiconductor arrangements and methods of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14763407Application Date: 2013-03-12
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Publication No.: US09450100B2Publication Date: 2016-09-20
- Inventor: Huilong Zhu
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Christensen Fonder P.A.
- Priority: CN201310050137 20130208
- International Application: PCT/CN2013/072445 WO 20130312
- International Announcement: WO2014/121538 WO 20140814
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/423
Abstract:
A semiconductor arrangement that includes: a substrate; a back gate formed on the substrate; fins formed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective fins. The back gate has opposite end portions recessed with respect to a middle portion thereof between the end portions, so that an overlap area between each of the end portions and each of the fins is smaller than an overlap area between the middle portion and the fin.
Public/Granted literature
- US20150364605A1 SEMICONDUCTOR ARRANGEMENTS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-12-17
Information query
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