An electrically programmable read only memory (EPROM) cell includes a semiconductor layer having a first conductivity, a first junction region having a second conductivity and a second junction region having the second conductivity, wherein the first and the second junction regions are disposed in an upper region of the semiconductor layer and spaced apart from each other, a gate insulation pattern and a floating gate pattern sequentially stacked over the semiconductor layer between the first and second junction regions, a first metal contact plug coupled to the first junction region, wherein an ohmic contact is formed between the first metal contact plug and the first junction region, and a second metal contact plug coupled to the second junction region, wherein a schottky contact is formed between the second metal contact plug and the second junction region.