Invention Grant
US09451669B2 CMOS adjustable over voltage ESD and surge protection for LED application
有权
CMOS可调过压ESD和浪涌保护用于LED应用
- Patent Title: CMOS adjustable over voltage ESD and surge protection for LED application
- Patent Title (中): CMOS可调过压ESD和浪涌保护用于LED应用
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Application No.: US13288570Application Date: 2011-11-03
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Publication No.: US09451669B2Publication Date: 2016-09-20
- Inventor: Achim Werner , Hans-Martin Ritter
- Applicant: Achim Werner , Hans-Martin Ritter
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agent Rajeev Madnawat
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H05B33/08 ; H01L27/02
Abstract:
Various embodiments relate to a light emitting diode protection circuit, including: a plurality of diodes connected in series; an input connected to a first diode of the plurality of diodes; an output; a first resistor connected between the plurality of diodes and the output; a transistor with a gate connected to a junction between the first resistor and the plurality of diodes and a source connected to the output; a second resistor connected between the input and drain of the transistor; and a silicon controlled rectifier (SCR) with an anode connected to the input, a base connected to the drain of the transistor, and a cathode connected to the output.
Public/Granted literature
- US20130114169A1 CMOS ADJUSTABLE OVER VOLTAGE ESD AND SURGE PROTECTION FOR LED APPLICATION Public/Granted day:2013-05-09
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