Invention Grant
- Patent Title: Solution for EUV power increment at wafer level
- Patent Title (中): 晶圆级EUV功率增量的解决方案
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Application No.: US14798646Application Date: 2015-07-14
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Publication No.: US09451683B1Publication Date: 2016-09-20
- Inventor: En-Chao Shen , Yiming Chiu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G21K5/02

Abstract:
The present disclosure relates to an extreme ultraviolet (EUV) radiation source having an angled primary laser, and an associated method of formation. In some embodiments, the EUV radiation source has a fuel droplet generator that provides fuel droplets to an EUV source vessel along a first trajectory. A primary laser is configured to generate a primary laser beam along a second trajectory that intersects the first trajectory at a non-perpendicular angle. A collector mirror is configured to focus the EUV radiation to an exit aperture of the EUV source vessel not linearly aligned with the second trajectory of the primary laser beam. By focusing the EUV radiation to an exit aperture not linearly aligned with the second trajectory, a protection element configured to block remnants of the primary laser beam can be located at a position that does not reduce a power of the focused EUV radiation.
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