Invention Grant
US09451683B1 Solution for EUV power increment at wafer level 有权
晶圆级EUV功率增量的解决方案

Solution for EUV power increment at wafer level
Abstract:
The present disclosure relates to an extreme ultraviolet (EUV) radiation source having an angled primary laser, and an associated method of formation. In some embodiments, the EUV radiation source has a fuel droplet generator that provides fuel droplets to an EUV source vessel along a first trajectory. A primary laser is configured to generate a primary laser beam along a second trajectory that intersects the first trajectory at a non-perpendicular angle. A collector mirror is configured to focus the EUV radiation to an exit aperture of the EUV source vessel not linearly aligned with the second trajectory of the primary laser beam. By focusing the EUV radiation to an exit aperture not linearly aligned with the second trajectory, a protection element configured to block remnants of the primary laser beam can be located at a position that does not reduce a power of the focused EUV radiation.
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