Invention Grant
- Patent Title: Semiconductor devices and processing methods
- Patent Title (中): 半导体器件及加工方法
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Application No.: US14055982Application Date: 2013-10-17
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Publication No.: US09455205B2Publication Date: 2016-09-27
- Inventor: Markus Zundel , Franz Hirler , Peter Nelle , Ludger Borucki , Markus Winkler , Erwin Vogl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102013111154 20131009
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66
Abstract:
A method for processing a semiconductor device in accordance with various embodiments may include: providing a semiconductor device having a first pad and a second pad electrically disconnected from the first pad; applying at least one electrical test potential to at least one of the first pad and the second pad; and electrically connecting the first pad and the second pad to one another after applying the at least one electrical test potential.
Public/Granted literature
- US20140097431A1 SEMICONDUCTOR DEVICES AND PROCESSING METHODS Public/Granted day:2014-04-10
Information query
