There is disclosed a silicon carbide porous material having a high thermal shock resistance. The silicon carbide porous material of the present invention includes silicon carbide particles, metal silicon and an oxide phase, and the silicon carbide particles are bonded to one another via at least one of the metal silicon and the oxide phase. Furthermore, the oxide phase includes a parent phase, and a dispersion phase dispersed in the parent phase and having a higher thermal expansion coefficient than the parent phase. Here, a lower limit value of a content ratio of the dispersion phase in the oxide phase is preferably 1 mass %, and upper limit value of the content ratio of the dispersion phase in the oxide phase is 40 mass %. Furthermore, it is preferable that the parent phase is cordierite and that the dispersion phase is mullite.