Invention Grant
US09457559B2 Method of making semiconductor substrate using an etching mask and method of making liquid ejection head substrate using an etching mask
有权
使用蚀刻掩模制造半导体衬底的方法和使用蚀刻掩模制造液体喷射头基板的方法
- Patent Title: Method of making semiconductor substrate using an etching mask and method of making liquid ejection head substrate using an etching mask
- Patent Title (中): 使用蚀刻掩模制造半导体衬底的方法和使用蚀刻掩模制造液体喷射头基板的方法
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Application No.: US14723312Application Date: 2015-05-27
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Publication No.: US09457559B2Publication Date: 2016-10-04
- Inventor: Hiroshi Higuchi , Takayuki Kamimura
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2014-112001 20140530; JP2015-088301 20150423
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3065 ; B41J2/00
Abstract:
A method of making a semiconductor substrate having a through-hole includes a step of forming an etching mask on a semiconductor substrate in accordance with a pattern corresponding to the through-hole, and a step of forming the through-hole by etching the semiconductor substrate, on which the etching mask has been formed, by reactive ion etching. At least a part of the pattern corresponding to the through-hole is formed so that the semiconductor substrate is exposed in a frame-like shape along the inner edge of the through-hole.
Public/Granted literature
- US20150348791A1 METHOD OF MAKING SEMICONDUCTOR SUBSTRATE AND METHOD OF MAKING LIQUID EJECTION HEAD SUBSTRATE Public/Granted day:2015-12-03
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