Invention Grant
US09458012B2 Method for shielding MEMS structures during front side wafer dicing
有权
用于在前侧晶片切割中屏蔽MEMS结构的方法
- Patent Title: Method for shielding MEMS structures during front side wafer dicing
- Patent Title (中): 用于在前侧晶片切割中屏蔽MEMS结构的方法
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Application No.: US14182736Application Date: 2014-02-18
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Publication No.: US09458012B2Publication Date: 2016-10-04
- Inventor: Alan J. Magnus , Vijay Sarihan
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: B81C1/00
- IPC: B81C1/00

Abstract:
A method includes applying a compressive force against MEMS structures at a front side of a MEMS wafer using a protective material covering at least a portion of the front side of the MEMS wafer. The method further includes concurrently dicing through the protective material and the MEMS wafer from the front side to produce a plurality of MEMS dies, each of which includes at least one of the MEMS structures. The protective material is secured over the front side of the MEMS wafer to apply pressure to the protective material, and thereby impart the compressive force against the MEMS structures to largely limit movement of the MEMS structures during dicing. A tack-free surface of the protective material enables its removal following dicing.
Public/Granted literature
- US20150232332A1 METHOD FOR SHIELDING MEMS STRUCTURES DURING FRONT SIDE WAFER DICING Public/Granted day:2015-08-20
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