Invention Grant
- Patent Title: Method of forming patterns
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Application No.: US14859794Application Date: 2015-09-21
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Publication No.: US09458343B2Publication Date: 2016-10-04
- Inventor: Hideaki Tsubaki
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-155322 20070612
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/32 ; C09D127/12 ; G03F7/039 ; G03F7/11 ; G03F7/20 ; H01L21/027 ; G03F7/16

Abstract:
A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.
Public/Granted literature
- US20160009936A1 METHOD OF FORMING PATTERNS Public/Granted day:2016-01-14
Information query
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