Invention Grant
US09459159B2 Heat-flux measuring method, substrate processing system, and heat-flux measuring member
有权
热通量测量方法,基板处理系统和热通量测量部件
- Patent Title: Heat-flux measuring method, substrate processing system, and heat-flux measuring member
- Patent Title (中): 热通量测量方法,基板处理系统和热通量测量部件
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Application No.: US14580460Application Date: 2014-12-23
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Publication No.: US09459159B2Publication Date: 2016-10-04
- Inventor: Chishio Koshimizu , Tatsuo Matsudo
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst, Manbeck, P.C.
- Priority: JP2013-268968 20131226
- Main IPC: G01K17/20
- IPC: G01K17/20 ; H05H1/24 ; H05H1/00 ; H01J37/32 ; G01J5/58

Abstract:
In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.
Public/Granted literature
- US20150185092A1 HEAT-FLUX MEASURING METHOD, SUBSTRATE PROCESSING SYSTEM, AND HEAT-FLUX MEASURING MEMBER Public/Granted day:2015-07-02
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