An OTP (One-Time Programmable) element can be fabricated in CMOS FinFET processes are disclosed. The OTP cell can be implemented as a MOS device, dummy-gate diode, or Schottky diode as selector is disclosed here. In one embodiment, the OTP element includes a MOS gate with at least one portion of the MOS gate can have at least one extended area to accelerate programming. An extended area is an extension of the OTP element beyond two nearest cathode and anode contacts and are longer than required by design rules. The extended area can also have reduced or substantially no current flowing through. The selector can be built with a MOS gate to divide at least one fin structure into two different active regions. By using different source/drain implant schemes on the two active regions, the selector can be turned on as MOS device, MOS device and/or diode, dummy-gate diode, or Schottky diode.