Invention Grant
US09460908B2 Method and device for slicing a shaped silicon ingot using layer transfer
有权
使用层转移来切割成型硅锭的方法和装置
- Patent Title: Method and device for slicing a shaped silicon ingot using layer transfer
- Patent Title (中): 使用层转移来切割成型硅锭的方法和装置
-
Application No.: US14106002Application Date: 2013-12-13
-
Publication No.: US09460908B2Publication Date: 2016-10-04
- Inventor: Francois J. Henley
- Applicant: Silicon Genesis Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Silicon Genesis Corporation
- Current Assignee: Silicon Genesis Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: C30B33/00
- IPC: C30B33/00 ; H01L21/02 ; C30B29/06 ; C30B33/06 ; B28D5/04

Abstract:
A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion.
Public/Granted literature
- US20140106540A1 METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TRANSFER Public/Granted day:2014-04-17
Information query