Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
- Patent Title (中): 制造半导体器件,衬底处理设备和非暂时计算机可读记录介质的方法
-
Application No.: US14856244Application Date: 2015-09-16
-
Publication No.: US09460914B2Publication Date: 2016-10-04
- Inventor: Katsuyoshi Harada , Yoshiro Hirose , Atsushi Sano
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-188429 20140917
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/34 ; C23C16/36 ; C23C16/38 ; C23C16/455 ; H01J37/32

Abstract:
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
Public/Granted literature
Information query
IPC分类: