Invention Grant
- Patent Title: Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system
- Patent Title (中): 半导体器件具有光刻系统的最小尺寸的分数维度的结构
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Application No.: US11691332Application Date: 2007-03-26
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Publication No.: US09460924B2Publication Date: 2016-10-04
- Inventor: Witold P. Maszara , Qi Xiang
- Applicant: Witold P. Maszara , Qi Xiang
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/033
Abstract:
A method for forming a semiconductor device is provided including processing a wafer having a spacer layer and a structure layer, the spacer layer is over the structure layer. The method continues including forming a first sidewall spacer from the spacer layer, forming a structure strip from the structure layer below the first sidewall spacer, forming a masking structure over and intersecting the structure strip, and forming a vertical post from the structure strip below the masking structure.
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