A semiconductor device manufacturing method for a semiconductor device having a p-n junction formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region, and comprising a low-lifetime region that has a carrier lifetime shorter than that in other regions at the interface of the p-n junction. The method includes an implantation process of, after implanting a second conductivity type impurity into the surface of the first semiconductor region with a first acceleration energy, implanting a second conductivity type impurity, with a second acceleration energy differing from the first acceleration energy, into the surface of the first semiconductor region into which the second conductivity type impurity has been implanted.