Semiconductor device and method of manufacturing the same

Invention Grant

US09460936B2 Semiconductor device and method of manufacturing the same 有权

Title translation: 半导体装置及其制造方法

Please log in to see more content

Patent Title: Semiconductor device and method of manufacturing the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US14856382

Application Date: 2015-09-16
Publication No.: US09460936B2

Publication Date: 2016-10-04
Inventor: Yoshiki Yamamoto , Hideki Makiyama , Takaaki Tsunomura , Toshiaki Iwamatsu
Applicant: Renesas Electronics Corporation
Applicant Address: JP Tokyo
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Tokyo
Agency: Shapiro, Gabor and Rosenberger, PLLC
Main IPC: H01L21/32
IPC: H01L21/32 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L29/786 ; H01L29/08

Semiconductor device and method of manufacturing the same

Abstract:

The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate electrode GE. And, end parts of the gate electrode GE in a gate length direction are positioned on the semiconductor layer EP1.

Abstract(Chinese):

半导体器件具有通过形成在基板上的栅极绝缘膜GI和源极/漏极半导体层EP1在基板上形成的栅电极GE。半导体层EP1的上表面比栅电极GE下方的基板的上表面高。并且，栅极电极GE的栅极长度方向的端部位于半导体层EP1上。

Public/Granted literature

US20160005865A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/32	......应用掩膜的