Invention Grant
- Patent Title: Semiconductor device and method of wafer level package integration
- Patent Title (中): 晶圆级封装集成半导体器件及方法
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Application No.: US13172680Application Date: 2011-06-29
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Publication No.: US09460951B2Publication Date: 2016-10-04
- Inventor: Yaojian Lin
- Applicant: Yaojian Lin
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/683 ; H01L21/56 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L23/498

Abstract:
A method of making a wafer level chip scale package includes providing a temporary substrate, and forming a wafer level interconnect structure over the temporary substrate using wafer level processes. The wafer level processes include forming a first insulating layer in contact with an upper surface of the temporary substrate, and forming a first conductive layer in contact with an upper surface of the first passivation layer. A first semiconductor die is mounted over the wafer level interconnect structure such that an active surface of the first semiconductor die is in electrical contact with the first conductive layer, and a first encapsulant is deposited over the first semiconductor die. A second encapsulant is deposited over the first encapsulant, and the first and second encapsulants are cured simultaneously. The temporary substrate is removed to expose the first passivation layer.
Public/Granted literature
- US20110254156A1 Semiconductor Device and Method of Wafer Level Package Integration Public/Granted day:2011-10-20
Information query
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