Invention Grant
US09460956B2 Method of forming shallow trench isolation and semiconductor device
有权
形成浅沟槽隔离和半导体器件的方法
- Patent Title: Method of forming shallow trench isolation and semiconductor device
- Patent Title (中): 形成浅沟槽隔离和半导体器件的方法
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Application No.: US14302504Application Date: 2014-06-12
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Publication No.: US09460956B2Publication Date: 2016-10-04
- Inventor: De-Fang Chen , Teng-Chun Tsai , Ching-Feng Fu , Cheng-Tung Lin , Li-Ting Wang , Chih-Tang Peng
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/02 ; H01L21/311 ; H01L21/306 ; H01L21/3105 ; H01L29/66 ; H01L29/78 ; H01L21/84 ; H01L29/06
Abstract:
According to an exemplary embodiment, a semiconductor device is provided. The semiconductor device includes: a substrate; a first vertical structure protruding from the substrate; a second vertical structure protruding from the substrate; an STI between the first vertical structure and the second vertical structure; wherein a first horizontal width between the first vertical structure and the STI is substantially the same as a second horizontal width between the second vertical structure and the STI.
Public/Granted literature
- US20150364360A1 METHOD OF FORMING SHALLOW TRENCH ISOLATION AND SEMICONDUCTOR DEVICE Public/Granted day:2015-12-17
Information query
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