Invention Grant
- Patent Title: Semiconductor device and structure therefor
- Patent Title (中): 半导体器件及其结构
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Application No.: US14939873Application Date: 2015-11-12
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Publication No.: US09460995B2Publication Date: 2016-10-04
- Inventor: Ali Salih , Chun-Li Liu , Gordon M. Grivna
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L23/522 ; H01L29/66 ; H01L29/778 ; H01L21/768 ; H01L23/498 ; H01L21/78 ; H01L23/482 ; H01L23/532 ; H01L29/20 ; H01L21/683 ; H01L23/00
Abstract:
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
Public/Granted literature
- US20160064325A1 SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR Public/Granted day:2016-03-03
Information query
IPC分类:
