Invention Grant
US09461021B2 Electronic circuit comprising PN junction and schottky barrier diodes
有权
包括PN结和肖特基势垒二极管的电子电路
- Patent Title: Electronic circuit comprising PN junction and schottky barrier diodes
- Patent Title (中): 包括PN结和肖特基势垒二极管的电子电路
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Application No.: US15001195Application Date: 2016-01-19
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Publication No.: US09461021B2Publication Date: 2016-10-04
- Inventor: Keiji Okumura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2010-121375 20100527
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L25/07 ; H02M7/00 ; H01L29/24 ; H01L23/31 ; H01L29/16 ; H01L29/78 ; H01L29/861 ; H01L29/872 ; H01L23/00
Abstract:
A semiconductor device includes a first chip including a PN junction diode, and a second chip including a Schottky barrier diode, connected in parallel to the first chip. A first inductive metal member has a first end connected to a cathode of the PN junction diode, and a second end connected to a cathode of the Schottky barrier diode. A second inductive metal member has a third end connected to the cathode of the Schottky barrier diode. An output line is connected to a fourth end of the second connection member, and electrically connected to the cathode of the PN junction diode via a first path formed by the first and second metal members, and to the cathode of the Schottky barrier diode via a second path formed by the second metal member and exclusive of the first metal member, so that the first path has greater inductance than the second.
Public/Granted literature
- US20160133609A1 ELECTRONIC CIRCUIT Public/Granted day:2016-05-12
Information query
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