Invention Grant
- Patent Title: Reduced generation of second harmonics of FETs
- Patent Title (中): 减少FET的二次谐波产生
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Application No.: US14174755Application Date: 2014-02-06
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Publication No.: US09461037B2Publication Date: 2016-10-04
- Inventor: Alper Genc
- Applicant: PEREGRINE SEMICONDUCTOR CORPORATION
- Applicant Address: US CA San Diego
- Assignee: Peregrine Semiconductor Corporation
- Current Assignee: Peregrine Semiconductor Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; John Land, Esq.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H03K17/16 ; H01L29/10
Abstract:
A structure and method for reducing second-order harmonic distortion in FET devices used in applications that are sensitive to such distortion, such as switching RF signals. The asymmetry of the drain-to-body capacitance Cdb and source-to-body capacitance Csb of a FET device are equalized by adding offsetting capacitance or a compensating voltage source.
Public/Granted literature
- US20150222260A1 Reduced Generation of Second Harmonics of FETs Public/Granted day:2015-08-06
Information query
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