Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14548349Application Date: 2014-11-20
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Publication No.: US09461047B2Publication Date: 2016-10-04
- Inventor: Kiyoshi Kato
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-249111 20101105; JP2011-113176 20110520
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/108 ; H01L29/786 ; H01L27/06 ; H01L27/105 ; H01L27/115

Abstract:
Provided is a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and which does not have a limitation on the number of writing. The semiconductor device includes both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small), and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (that is, a transistor capable of operating at sufficiently high speed). Further, the peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion, so that the area and size of the semiconductor device can be decreased.
Public/Granted literature
- US20150108476A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-23
Information query
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