A semiconductor device may include semiconductor patterns. The semiconductor device may include insulating layers including first regions surrounding the semiconductor patterns and second regions isolated from each other by island-type first openings and connecting the first regions adjacent to each other. The semiconductor device may include metal layers interposed between the first regions of the stacked insulating layers surrounding the semiconductor patterns, and isolated from each other by line-type second openings overlapping the first openings and the second regions. The semiconductor device may include dielectric patterns partially interposed between the insulating layers and the metal layers and exposed through the second openings.