Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same, and device comprising the same
- Patent Title (中): 薄膜晶体管及其制造方法及其制造方法
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Application No.: US14377946Application Date: 2013-12-11
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Publication No.: US09461070B2Publication Date: 2016-10-04
- Inventor: Yanzhao Li , Gang Wang , Jingang Fang
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201310269381 20130628
- International Application: PCT/CN2013/089030 WO 20131211
- International Announcement: WO2014/206021 WO 20141231
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L27/12 ; H01L29/786 ; H01L29/66 ; H01L29/24 ; H01L29/20 ; H01L29/04 ; H01L21/02 ; H01L21/477 ; H01L21/461 ; H01L21/324
Abstract:
A thin film transistor is provided. An active layer (3) of the thin film transistor is made of an amorphous phosphide semiconductor material. Due to high carrier mobility of the phosphide semiconductor material, a thin film transistor with a high carrier mobility can be obtained by employing the amorphous phosphide semiconductor material to prepare the active layer of the thin film transistor. A method for manufacturing such a thin film transistor, and an array substrate and a display panel each comprising such a thin film transistor, are further provided.
Public/Granted literature
- US20150318309A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DEVICE COMPRISING THE SAME Public/Granted day:2015-11-05
Information query
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