Invention Grant
- Patent Title: SiC power device having a high voltage termination
- Patent Title (中): 具有高电压端接的SiC功率器件
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Application No.: US14750655Application Date: 2015-06-25
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Publication No.: US09461108B2Publication Date: 2016-10-04
- Inventor: Andrei Konstantinov
- Applicant: FAIRCHILD SEMICONDUCTOR CORPORATION
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/06 ; H01L29/16 ; H01L29/10 ; H01L29/861 ; H01L29/78 ; H01L29/66 ; H01L29/872 ; H01L29/732

Abstract:
In one general aspect, an apparatus can include a semiconductor region including a silicon carbide material and a junction termination extension implant region disposed in the semiconductor region. The apparatus can include a low interface state density portion of a dielectric layer having at least a portion in contact with the junction termination extension implant region.
Public/Granted literature
- US20160049465A1 SIC POWER DEVICE HAVING A HIGH VOLTAGE TERMINATION Public/Granted day:2016-02-18
Information query
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