A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.