Invention Grant
- Patent Title: Ga2O3 semiconductor element
- Patent Title (中): Ga2O3半导体元件
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Application No.: US14343686Application Date: 2012-09-07
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Publication No.: US09461124B2Publication Date: 2016-10-04
- Inventor: Kohei Sasaki , Masataka Higashiwaki
- Applicant: Kohei Sasaki , Masataka Higashiwaki
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: TAMURA CORPORATION,NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
- Current Assignee: TAMURA CORPORATION,NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: McGinn IP Law Group PLLC
- Priority: JP2011-196440 20110908
- International Application: PCT/JP2012/072902 WO 20120907
- International Announcement: WO2013/035845 WO 20130314
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L29/78 ; H01L21/02 ; H01L29/66 ; H01L29/04 ; H01L29/36
Abstract:
A Ga2O3 semiconductor element, includes: an n-type β-Ga2O3 substrate; a β-Ga2O3 single crystal film, which is formed on the n-type β-Ga2O3 substrate; source electrodes, which are formed on the β-Ga2O3 single crystal film; a drain electrode, which is formed on the n-type β-Ga2O3 substrate surface on the reverse side of the β-Ga2O3 single crystal film; n-type contact regions, which are formed in the β-Ga2O3 single crystal film, and have the source electrodes connected thereto, respectively; and a gate electrode, which is formed on the β-Ga2O3 single crystal film with the gate insulating film therebetween.
Public/Granted literature
- US20140217405A1 Ga2O3 SEMICONDUCTOR ELEMENT Public/Granted day:2014-08-07
Information query
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