Invention Grant
- Patent Title: Nanowire electric field effect sensor having three-dimensional stacking structure nanowire and manufacturing method therefor
- Patent Title (中): 具有三维堆叠结构纳米线的纳米线电场效应传感器及其制造方法
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Application No.: US14648969Application Date: 2013-11-22
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Publication No.: US09461157B2Publication Date: 2016-10-04
- Inventor: Jeong Soo Lee , Yoon Ha Jeong , Sung Ho Kim , Ki Hyun Kim , Tai Uk Rim , Chang Ki Baek
- Applicant: POSTECH ACADEMY—INDUSTRY FOUNDATION
- Applicant Address: KR Pohang-Si, Gyeongsangbuk-Do
- Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee Address: KR Pohang-Si, Gyeongsangbuk-Do
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2012-0140109 20121205
- International Application: PCT/KR2013/010655 WO 20131122
- International Announcement: WO2014/088244 WO 20140612
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L29/775 ; H01L29/66 ; G01N27/414

Abstract:
The present invention provides a nanowire sensor comprising nanowires, in which the nanowires are stacked to form a three-dimensional structure so that they have a large exposed surface area compared to that of a conventional straight nanowire sensor in the same limited area, thereby increasing the probability of attachment of a target material to the nanowires to thereby increase the measurement sensitivity of the sensor. Thus, a change in the electrical conductivity (conductance or resistance) of the nanowires can be sensed with higher sensitivity, suggesting that the sensor has increased sensitivity.
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