Invention Grant
US09461169B2 Device and method for fabricating thin semiconductor channel and buried strain memorization layer
有权
用于制造薄半导体沟道和埋层应变记忆层的器件和方法
- Patent Title: Device and method for fabricating thin semiconductor channel and buried strain memorization layer
- Patent Title (中): 用于制造薄半导体沟道和埋层应变记忆层的器件和方法
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Application No.: US12789792Application Date: 2010-05-28
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Publication No.: US09461169B2Publication Date: 2016-10-04
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L29/78 ; H01L21/02 ; H01L21/265
Abstract:
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material.
Public/Granted literature
- US20110291100A1 DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BURIED STRAIN MEMORIZATION LAYER Public/Granted day:2011-12-01
Information query
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