Invention Grant
- Patent Title: Piezoelectric thin film, piezoelectric element, and manufacturing method thereof
- Patent Title (中): 压电薄膜,压电元件及其制造方法
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Application No.: US13581429Application Date: 2011-02-28
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Publication No.: US09461238B2Publication Date: 2016-10-04
- Inventor: Makoto Kubota , Kenichi Takeda , Jumpei Hayashi , Mikio Shimada , Yuichi Shimakawa , Masaki Azuma , Yoshitaka Nakamura , Masanori Kawai
- Applicant: Makoto Kubota , Kenichi Takeda , Jumpei Hayashi , Mikio Shimada , Yuichi Shimakawa , Masaki Azuma , Yoshitaka Nakamura , Masanori Kawai
- Applicant Address: JP Tokyo JP Kyoto-Shi
- Assignee: CANON KABUSHIKI KAISHA,KYOTO UNIVERSITY
- Current Assignee: CANON KABUSHIKI KAISHA,KYOTO UNIVERSITY
- Current Assignee Address: JP Tokyo JP Kyoto-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-045907 20100302
- International Application: PCT/JP2011/055153 WO 20110228
- International Announcement: WO2011/108732 WO 20110909
- Main IPC: H01L41/18
- IPC: H01L41/18 ; H01L41/187 ; B41J2/14 ; H01L41/047 ; H01L41/08 ; H01L41/318 ; H02N2/10 ; H02N2/16 ; H01L41/09

Abstract:
Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.
Public/Granted literature
- US20120319533A1 PIEZOELECTRIC THIN FILM, PIEZOELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-12-20
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