Invention Grant
- Patent Title: Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
-
Application No.: US14945947Application Date: 2015-11-19
-
Publication No.: US09461271B2Publication Date: 2016-10-04
- Inventor: Keiko Saito , Hisao Ikeda
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2003-345579 20031003
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/50 ; H01L51/52
Abstract:
A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and layers are laminated so that the second electrode is formed later than the first electrode. The light-emitting element is suppressed damage caused to a layer including an organic material during deposition by sputtering and a phenomenon such as short circuit between electrodes.
Public/Granted literature
Information query
IPC分类:
