Invention Grant
US09461616B2 Bulk wave resonator having an aluminum nitride film containing scandium and ScAlN protective layer
有权
具有包含钪和ScAlN保护层的氮化铝膜的体波谐振器
- Patent Title: Bulk wave resonator having an aluminum nitride film containing scandium and ScAlN protective layer
- Patent Title (中): 具有包含钪和ScAlN保护层的氮化铝膜的体波谐振器
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Application No.: US14548353Application Date: 2014-11-20
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Publication No.: US09461616B2Publication Date: 2016-10-04
- Inventor: Keiichi Umeda
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-Fu
- Agency: Arent Fox LLP
- Priority: JP2012-116791 20120522
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/02 ; H03H9/54

Abstract:
A bulk wave resonator that includes an aluminum nitride film containing scandium on a substrate, a first electrode disposed on one surface of the aluminum nitride film containing scandium, and a second electrode disposed on the other surface of the aluminum nitride film containing scandium. The aluminum nitride film containing scandium includes a portion acoustically isolated from a top surface of the substrate. The first electrode overlaps the second electrode with the aluminum nitride film containing scandium interposed therebetween. The overlap forms a piezoelectric vibrating portion. The scandium content of the aluminum nitride film containing scandium is 5 atomic percent or more and 43 atomic percent or less when Sc and Al of the aluminum nitride film containing scandium constitute 100 atomic percent.
Public/Granted literature
- US20150084719A1 Bulk Wave Resonator Public/Granted day:2015-03-26
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