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US09461616B2 Bulk wave resonator having an aluminum nitride film containing scandium and ScAlN protective layer 有权
具有包含钪和ScAlN保护层的氮化铝膜的体波谐振器

Bulk wave resonator having an aluminum nitride film containing scandium and ScAlN protective layer
Abstract:
A bulk wave resonator that includes an aluminum nitride film containing scandium on a substrate, a first electrode disposed on one surface of the aluminum nitride film containing scandium, and a second electrode disposed on the other surface of the aluminum nitride film containing scandium. The aluminum nitride film containing scandium includes a portion acoustically isolated from a top surface of the substrate. The first electrode overlaps the second electrode with the aluminum nitride film containing scandium interposed therebetween. The overlap forms a piezoelectric vibrating portion. The scandium content of the aluminum nitride film containing scandium is 5 atomic percent or more and 43 atomic percent or less when Sc and Al of the aluminum nitride film containing scandium constitute 100 atomic percent.
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