Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14638572Application Date: 2015-03-04
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Publication No.: US09461647B2Publication Date: 2016-10-04
- Inventor: Won Kyung Chung , Saeng Hwan Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-Si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2014-0174068 20141205
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; G11C11/4093

Abstract:
A semiconductor device may include a first channel provided in a first die. The semiconductor device may include a second channel provided in a second die and disposed adjacent to the first channel, and configured to exchange signals and data with the first channel. The first channel and the second channel may receive and output calibration-related signals from and to each other through bonding, and may share calibration start signals. The calibration start signal may be respectively generated in the first channel and the second channel.
Public/Granted literature
- US20160164521A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
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