Invention Grant
US09461649B2 Programmable logic circuit architecture using resistive memory elements
有权
使用电阻式存储器元件的可编程逻辑电路架构
- Patent Title: Programmable logic circuit architecture using resistive memory elements
- Patent Title (中): 使用电阻式存储器元件的可编程逻辑电路架构
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Application No.: US14404874Application Date: 2013-06-03
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Publication No.: US09461649B2Publication Date: 2016-10-04
- Inventor: Jingsheng J. Cong , Bingjun Xiao
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- International Application: PCT/US2013/043923 WO 20130603
- International Announcement: WO2013/181664 WO 20131205
- Main IPC: H03K19/177
- IPC: H03K19/177 ; H03K19/173 ; G11C13/00 ; G11C5/06 ; H01L45/00

Abstract:
A programmable logic circuit architecture using resistive memory elements. The proposed circuit architecture uses the conventional island-based Field Programmable Gate Array (FPGA) architecture, but with novel integration of CMOS-compatible resistive memory elements that can be programmed efficiently. In the proposed architecture, the programmable interconnects of FPGA are redesigned to use only resistive memory elements and metal wires. Then, the interconnects can be entirely fabricated over logic blocks to save area while keeping their architectural functions unchanged, and the programming transistors can be shared among resistive memory elements to save area. Finally, on-demand buffer insertion is proposed as the buffering solution to achieve more speedup.
Public/Granted literature
- US20150123706A1 PROGRAMMABLE LOGIC CIRCUIT ARCHITECTURE USING RESISTIVE MEMORY ELEMENTS Public/Granted day:2015-05-07
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