Invention Grant
- Patent Title: Spacer layer for embedding semiconductor die
- Patent Title (中): 用于嵌入半导体管芯的间隔层
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Application No.: US14561768Application Date: 2014-12-05
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Publication No.: US09462694B2Publication Date: 2016-10-04
- Inventor: Junrong Yan , Weili Wang , Li Wang , Pradeep Rai , Xin Lu , Jianbin Gu , Peng Lu
- Applicant: SANDISK SEMICONDUCTOR (SHANGHAI) CO., LTD.
- Applicant Address: CN Shanghai
- Assignee: SanDisk Semiconductor (Shanghai) Co. Ltd.
- Current Assignee: SanDisk Semiconductor (Shanghai) Co. Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Vierra Magen Marcus LLP
- Priority: CN201310743148 20131230
- Main IPC: G11C16/02
- IPC: G11C16/02 ; H05K1/18 ; H01L25/065

Abstract:
A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a semiconductor die, such as a controller die, mounted on a surface of a substrate. A spacer layer is also mounted to the substrate, with the semiconductor die fitting within an aperture or a notch formed through first and second major opposed surfaces of the spacer layer. Additional semiconductor die, such as flash memory die, may be mounted atop the spacer layer.
Public/Granted literature
- US20150187421A1 SPACER LAYER FOR EMBEDDING SEMICONDUCTOR DIE Public/Granted day:2015-07-02
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