A power semiconductor device comprising a first housing having a cutout with an opening, and a second housing. The device has a load element having external and internal sections, and a feedthrough section pressing through the opening. The feedthrough section has a first outer edge region which tapers laterally towards a first outer edge thereof and a second outer edge region which tapers laterally towards a second outer edge thereof. The first and second outer edge regions face away from one another. The first outer edge is near the lateral first end of the opening and the second outer edge is near the lateral second end of the opening. A first seal is positioned between the first housing and the feedthrough section and a second seal is positioned between the second housing and the feedthrough section. The seals contact one another laterally from the first and second outer edges.