Invention Grant
- Patent Title: Static random access memory and driving method thereof
- Patent Title (中): 静态随机存取存储器及其驱动方法
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Application No.: US14831035Application Date: 2015-08-20
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Publication No.: US09466359B2Publication Date: 2016-10-11
- Inventor: Jong Sun Park , Woong Choi
- Applicant: Korea University Research and Business Foundation
- Applicant Address: KR Seoul
- Assignee: Korea University Research and Business Foundation
- Current Assignee: Korea University Research and Business Foundation
- Current Assignee Address: KR Seoul
- Agency: Fox Rothschild LLP
- Agent Peter J. Butch, III; Carol E. Thorstad-Forsyth
- Priority: KR10-2014-0036140 20140327
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/419 ; G11C8/08 ; G11C16/30 ; G11C7/12 ; G11C11/4074

Abstract:
A static random access memory comprises a pre-charge unit that supplies a pre-charge voltage to first and second bit lines connected to a bit cell; a capacitor, of which one or the other terminal is selectively connected to a ground terminal; a clamping unit that selectively connects the bit lines with the capacitor to adjust a voltage level of the bit lines; and a mux unit that is included in a unit memory cell including the bit cell, the pre-charge unit, the capacitor and the clamping unit, and activates the bit lines of the unit memory cell in response to reception of a selection signal; wherein the clamping unit connects the first and second bit lines with the capacitor in response to a charge sharing control signal, to induce charge sharing between the first and second bit lines and the capacitor.
Public/Granted literature
- US20150364184A1 STATIC RANDOM ACCESS MEMORY AND RIVING METHOD THEREOF Public/Granted day:2015-12-17
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