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US09466498B2 CMOS gas sensor and method for manufacturing the same 有权
CMOS气体传感器及其制造方法

CMOS gas sensor and method for manufacturing the same
Abstract:
A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.
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