Invention Grant
- Patent Title: CMOS gas sensor and method for manufacturing the same
- Patent Title (中): CMOS气体传感器及其制造方法
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Application No.: US14160986Application Date: 2014-01-22
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Publication No.: US09466498B2Publication Date: 2016-10-11
- Inventor: Johannes Buhler , Cyrill Kuemin
- Applicant: Sensirion AG
- Applicant Address: CH Stafa
- Assignee: Sensirion AG
- Current Assignee: Sensirion AG
- Current Assignee Address: CH Stafa
- Agency: Cooper & Dunham LLP
- Priority: EP13405019 20130131
- Main IPC: G01N7/00
- IPC: G01N7/00 ; G01N9/00 ; H01L21/00 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/285 ; G01N27/12

Abstract:
A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.
Public/Granted literature
- US20140208830A1 CMOS GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-07-31
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