Invention Grant
US09466519B2 De-chuck control method and control device for plasma processing apparatus
有权
用于等离子体处理装置的脱卡盘控制方法和控制装置
- Patent Title: De-chuck control method and control device for plasma processing apparatus
- Patent Title (中): 用于等离子体处理装置的脱卡盘控制方法和控制装置
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Application No.: US14367305Application Date: 2013-01-25
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Publication No.: US09466519B2Publication Date: 2016-10-11
- Inventor: Atsushi Kawabata
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2012-021658 20120203
- International Application: PCT/JP2013/051654 WO 20130125
- International Announcement: WO2013/115110 WO 20130808
- Main IPC: H01L21/683
- IPC: H01L21/683 ; G01R19/25 ; H02N13/00

Abstract:
A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.
Public/Granted literature
- US20150303092A1 DE-CHUCK CONTROL METHOD AND CONTROL DEVICE FOR PLASMA PROCESSING APPARATUS Public/Granted day:2015-10-22
Information query
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