Invention Grant
US09466519B2 De-chuck control method and control device for plasma processing apparatus 有权
用于等离子体处理装置的脱卡盘控制方法和控制装置

  • Patent Title: De-chuck control method and control device for plasma processing apparatus
  • Patent Title (中): 用于等离子体处理装置的脱卡盘控制方法和控制装置
  • Application No.: US14367305
    Application Date: 2013-01-25
  • Publication No.: US09466519B2
    Publication Date: 2016-10-11
  • Inventor: Atsushi Kawabata
  • Applicant: Tokyo Electron Limited
  • Applicant Address: JP Tokyo
  • Assignee: Tokyo Electron Limited
  • Current Assignee: Tokyo Electron Limited
  • Current Assignee Address: JP Tokyo
  • Agency: IPUSA, PLLC
  • Priority: JP2012-021658 20120203
  • International Application: PCT/JP2013/051654 WO 20130125
  • International Announcement: WO2013/115110 WO 20130808
  • Main IPC: H01L21/683
  • IPC: H01L21/683 G01R19/25 H02N13/00
De-chuck control method and control device for plasma processing apparatus
Abstract:
A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.
Information query
Patent Agency Ranking
0/0