Invention Grant
- Patent Title: Method for creating contacts in semiconductor substrates
- Patent Title (中): 在半导体衬底中产生触点的方法
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Application No.: US14626404Application Date: 2015-02-19
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Publication No.: US09466527B2Publication Date: 2016-10-11
- Inventor: Anton J. deVilliers
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L23/522 ; H01L23/532

Abstract:
Techniques include methods for creating contacts for microchips, solar films, etc., for electrically connecting conductive elements and/or for current spreading. Embodiments herein include using an oversized “board” or contact array positioned between a lower layer and an upper layer. This contact array is created by directed self-assembly (DSA) of block copolymers. The lower and upper layers can have conductive structures such as lines. The oversized board can be comprised of hundreds, thousands, millions (etc.) of small conductive contact cylinders, lines or other vertical structures, with each conductive structure electrically isolated from adjacent conductive structures in the array. A crossover location of a line on a lower level with a line on an upper level is connected with multiple conductive structures located at the cross over location.
Public/Granted literature
- US20150243554A1 Method for Creating Contacts in Semiconductor Substrates Public/Granted day:2015-08-27
Information query
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