Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14844707Application Date: 2015-09-03
-
Publication No.: US09466542B2Publication Date: 2016-10-11
- Inventor: Tetsuya Inaba
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2013-159424 20130731
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/06 ; H01L23/48 ; H01L23/34 ; H01L21/44 ; H01L21/50 ; H01L23/055 ; H01L25/07 ; H01L25/18 ; H01L23/13 ; H01L23/15 ; H01L23/498 ; H01L23/538 ; H01L23/29 ; H01L23/31 ; H01L23/492

Abstract:
A semiconductor device includes a semiconductor chip having a front electrode and a rear electrode; a conductive plate having a main surface connected to the rear electrode of the semiconductor chip; an insulating plate fixed to a surface of the conductive plate opposite to the main surface; and a ceramic case having first and second terminals buried therein, a cavity accommodating the semiconductor chip, the conductive plate, and the insulating plate, and an electrode surface opposite to an opening portion of the cavity. The first terminal has one end connected to the front electrode of the semiconductor chip, and another end exposed from the electrode surface. The second terminal has one end connected to the main surface of the conductive plate, and another end exposed from the electrode surface. The ceramic case and the insulating plate form a housing.
Public/Granted literature
- US20150380331A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-31
Information query
IPC分类: