Invention Grant
- Patent Title: Light emitting diode having multi-junction structure and method of fabricating the same
- Patent Title (中): 具有多结结构的发光二极管及其制造方法
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Application No.: US14340940Application Date: 2014-07-25
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Publication No.: US09466642B2Publication Date: 2016-10-11
- Inventor: Dong-Seon Lee , Dukjo Kong , Chang Mo Kang
- Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Gwangju
- Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Gwangju
- Agency: Hauptman Ham, LLP
- Priority: KR10-2013-0089287 20130729
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/44
Abstract:
Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.
Public/Granted literature
- US20150028356A1 LIGHT EMITTING DIODE HAVING MULTI-JUNCTION STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-01-29
Information query
IPC分类:
