Invention Grant
US09466671B2 Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
有权
具有鳍状栅极的半导体器件，包括该栅极的电阻式存储器件及其制造方法
- Patent Title: Semiconductor device having fin gate, resistive memory device including the same, and method of manufacturing the same
- Patent Title (中): 具有鳍状栅极的半导体器件，包括该栅极的电阻式存储器件及其制造方法
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Application No.: US14460175Application Date: 2014-08-14
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Publication No.: US09466671B2Publication Date: 2016-10-11
- Inventor: Nam Kyun Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0097818 20130819; KR10-2014-0050647 20140428
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/10 ; H01L29/78 ; H01L27/24 ; H01L27/22
Abstract:
A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device includes an active pillar formed on a semiconductor substrate, and including a first region and a second region surrounding at least one surface of the first region, and a fin gate extending to overlap an upper surface and a lateral surface of the active pillar. The first region of the active pillar is formed of a semiconductor layer having a lattice constant smaller than that of the second region of the active pillar.
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