Invention Grant
- Patent Title: Method to improve reliability of replacement gate device
- Patent Title (中): 提高替换门装置可靠性的方法
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Application No.: US14699746Application Date: 2015-04-29
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Publication No.: US09466692B2Publication Date: 2016-10-11
- Inventor: Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L21/28 ; H01L21/324 ; H01L29/423 ; H01L21/321
Abstract:
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
Public/Granted literature
- US20150243761A1 METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE Public/Granted day:2015-08-27
Information query
IPC分类:
