Invention Grant
- Patent Title: Planar mosfets and methods of fabrication, charge retention
- Patent Title (中): 平面的mosfets和制造方法，电荷保留
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Application No.: US14597233Application Date: 2015-01-15
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Publication No.: US09466707B2Publication Date: 2016-10-11
- Inventor: Mau Lam Lai , Yeuk Yin Mong , Duc Quang Chau
- Applicant: Mau Lam Lai
- Priority: HK14100500 20140116
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/788
Abstract:
A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second conductivity type inside the epitaxial layer, the second conductivity type having a polarity opposite to the first conductivity type, a source region inside the body region, a source contact portion to provide electrical contact with the source region, and a gate portion. A drift region is defined in the epitaxial layer between body regions of adjacent MOSFET cells and the gate portions of the adjacent MOSFET cells across said drift region are separated from each other with electrical insulation. A charge induction terminal is provided on the drift region to induce and store electric charge at said drift region upon application of a charge induction voltage at said charge induction terminal.
Public/Granted literature
- US20150200290A1 PLANAR MOSFETS AND METHODS OF FABRICATION, CHARGE RETENTION Public/Granted day:2015-07-16
Information query
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