Invention Grant
- Patent Title: Method of forming a transistor and structure therefor
- Patent Title (中): 形成晶体管及其结构的方法
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Application No.: US13831883Application Date: 2013-03-15
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Publication No.: US09466708B2Publication Date: 2016-10-11
- Inventor: Balaji Padmanabhan , Prasad Venkatraman , Gordon M. Grivna
- Applicant: Balaji Padmanabhan , Prasad Venkatraman , Gordon M. Grivna
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/70 ; H01L29/78 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/51
Abstract:
In one embodiment, a semiconductor device is formed to include a gate structure extending into a semiconductor material that is underlying a first region of semiconductor material. The gate structure includes a conductor and also a gate insulator that has a first portion positioned between the gate conductor and a first portion of the semiconductor material that underlies the gate conductor. The first portion of the semiconductor material is configured to form a channel region of the transistor which underlies the gate conductor. The gate structure may also include a shield conductor overlying the gate conductor and having a shield insulator between the shield conductor and the gate conductor. The shield insulator may also have a second portion positioned between the shield conductor and a second portion of the gate insulator and a third portion overlying the shield conductor.
Public/Granted literature
- US20140264565A1 METHOD OF FORMING A TRANSISTOR AND STRUCTURE THEREFOR Public/Granted day:2014-09-18
Information query
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