Invention Grant
US09466714B2 Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts
有权
具有同轴布置的栅极触点和漏极触点的垂直隧道场效应晶体管单元
- Patent Title: Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts
- Patent Title (中): 具有同轴布置的栅极触点和漏极触点的垂直隧道场效应晶体管单元
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Application No.: US14704592Application Date: 2015-05-05
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Publication No.: US09466714B2Publication Date: 2016-10-11
- Inventor: Harry-Hak-Lay Chuang , Cheng-Cheng Kuo , Ming Zhu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L27/088 ; H01L29/423 ; H01L23/535
Abstract:
A tunneling field-effect transistor (TFET) device includes a source region, a gate stack, and a drain region. The TFET device further includes a source contact on the source region, a plurality of gate contacts on a planar portion of the gate stack, and a plurality of drain contacts on the drain region. The gate contacts are aligned on a first plurality of lines that intersect at a common point on the source region from a top view. The drain contacts are aligned on a second plurality of lines that intersect at the common point from the top view.
Public/Granted literature
- US20150236153A1 Vertical Tunneling Field-Effect Transistor Cell with Coaxially Arranged Gate Contacts and Drain Contacts Public/Granted day:2015-08-20
Information query
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